PART |
Description |
Maker |
MMDF3P03HD ON2187 ON2186 |
DUAL TMOS POWER MOSFET 30 VOLTS From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MMDF3N03HD ON2180 |
From old datasheet system DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MTDF1P02HD ON2526 ON2525 |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM From old datasheet system
|
Motorola, Inc
|
MTDF1N03HD ON2524 ON2523 |
DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MMDF2N02E MMDF2N02E_D ON2160 |
From old datasheet system Medium Power Surface Mount Products DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1 |
1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
|
MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
ISL6610CRZ ISL6610CBZ ISL6610 ISL6610A ISL6610ACBZ |
Dual Synchronous Rectified MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 16-QFN T&R 4 A BUF OR INV BASED MOSFET DRIVER, PQCC16
|
Intersil, Corp. Intersil Corporation
|
MMFT3055EL |
MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|